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Additional info for Advances in Joining of Ceramics, Volume 138
Am. Ceram. Soc, 79: 1839-1850,1996. 78. J. G. Lee, K. Y. Lee and E. D. Case, "Joining of Diamond Thin Films to Optical and IR Materials," pp. , Westerville, OH, 1998. 79. J. G. Lee and E. D. Case, "Microwave Joining of Particulate Composites", pp. , Westerville, OH, 2000. 80. S. P. Kovalev, P. Miranzo and M. I. Osendi, "Finite element simulation of thermal residual stresses in joining ceramics with thin metal interlayers", J. Am. Ceram. Soc, 81: 2342-2348,1998. 81. T. F. Yen, Y. H. Chang, D.
39 Advances in Joining of Ceramics 38 Fig. 8 Effect of bonding pressure on thickness of interdiffusion layer SF at S = 100% of Cu/Ni bonding. 4 |im. The bonding time tF taken for S = 100% is shown in Fig. 9. Fig. 7 shows the bond ratio required to obtain each thickness of interdiffusion layer,8m> under each bonding condition (P, T), For example, in Fig. 7 (a), if P = 10 MPa, the bond-ratio of S = 49 % is necessary to produce Sm = 3 Jim. In other words, the diffusion layer of Sm = 3 |im is naturally produced during bonding, while S = 49 % is achieved.
Westerville, OH, 1998. 39. Y. Lee and E. D. Case, "Steady-State Temperature of Microwave-Heated Refractories as a Function of Microwave Power and Refractory Geometry," Materials Science and Engineering, A269: 8 - 20,1999. 40. D. Case and J. G. Lee, "Techniques to minimize the effect of refractory casket Tiot spots' during microwave processing," pp. 5 - 8 in Proceedings of the 35 th International Microwave Power Symposium, International Microwave Power Institute, Manassas, VA, 2000. 41. G. Lee, E.
Advances in Joining of Ceramics, Volume 138